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2SC1915 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1915MIT395Yes

2SC1915 is a bipolar NPN transistor manufactured by MIT (Mitsubishi Electric).

The 2SC1915 is a bipolar NPN transistor manufactured by MIT (Mitsubishi Electric). Below are the factual specifications, descriptions, and features:

Manufacturer:

  • MIT (Mitsubishi Electric)

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (Vcb): 60V
  • Maximum Collector-Emitter Voltage (Vce): 50V
  • Maximum Emitter-Base Voltage (Veb): 5V
  • Maximum Collector Current (Ic): 50mA
  • Maximum Power Dissipation (Pc): 300mW
  • Transition Frequency (ft): 150MHz
  • DC Current Gain (hFE): 60 - 320
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The 2SC1915 is a high-frequency, low-power NPN transistor designed for amplification and switching applications.
  • It is commonly used in RF and general-purpose circuits.

Features:

  • High Transition Frequency (150MHz) for RF applications.
  • Low Noise performance suitable for signal amplification.
  • Compact TO-92 Package for easy PCB mounting.

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to the official MIT documentation.

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