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2SC829C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC829CMIT555Yes

2SC829C** is a silicon NPN transistor manufactured by **MIT (Mitsubishi Electric Corporation)**.

The 2SC829C is a silicon NPN transistor manufactured by MIT (Mitsubishi Electric Corporation).

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCBO): 60V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PTOT): 300mW
  • DC Current Gain (hFE): 40 ~ 320 (depending on operating conditions)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions and Features:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power RF and audio applications.
  • High current gain (hFE) range for flexibility in circuit design.
  • Compact TO-92 package for easy PCB mounting.

This transistor is commonly used in small-signal amplification, oscillator circuits, and low-power switching applications.

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