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BCR1AM-8 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BCR1AM-8MIT330Yes

BCR1AM-8** is a **1 A, 50 V, NPN Darlington transistor array** manufactured by **Mitsubishi Electric (MIT)**.

The BCR1AM-8 is a 1 A, 50 V, NPN Darlington transistor array manufactured by Mitsubishi Electric (MIT).

MIT Specifications:

  • Type: NPN Darlington Transistor Array
  • Collector Current (Ic): 1 A
  • Collector-Emitter Voltage (Vceo): 50 V
  • Input Voltage (Vbe): 2.5 V (max)
  • DC Current Gain (hFE): 1000 (min)
  • Power Dissipation (Pd): 1 W (per transistor)
  • Package: 8-pin DIP (Dual In-line Package)

Descriptions & Features:

  • Contains eight independent NPN Darlington pairs in a single package.
  • Designed for high-current switching applications.
  • Built-in suppression diodes for inductive load protection.
  • Low saturation voltage (Vce(sat) ~1.5 V at 500 mA).
  • Suitable for relay drivers, motor control, and LED displays.

This component is optimized for automotive, industrial, and consumer electronics applications requiring reliable high-current switching.

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