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M53202P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
M53202PMIT330Yes

M53202P** is a semiconductor component manufactured by **MIT (Mitsubishi Electric)**.

The M53202P is a semiconductor component manufactured by MIT (Mitsubishi Electric). Below are the factual details regarding its specifications, descriptions, and features:

Manufacturer:

  • MIT (Mitsubishi Electric)

Specifications:

  • Type: High-voltage switching transistor
  • Package: TO-220 (standard through-hole package)
  • Maximum Collector-Emitter Voltage (VCEO): 900V
  • Maximum Collector Current (IC): 5A
  • Power Dissipation (PD): 40W
  • DC Current Gain (hFE): 15 (min)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-voltage switching applications.
  • Suitable for power supply circuits, inverters, and motor control systems.
  • Features a rugged construction for reliable performance in demanding environments.

Features:

  • High breakdown voltage capability (900V).
  • Low saturation voltage for efficient switching.
  • Fast switching speed.
  • Built-in damper diode for improved reliability in inductive load applications.

For exact datasheet details, refer to Mitsubishi Electric's official documentation.

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