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M5L2102AP-4 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
M5L2102AP-4MIT100Yes

M5L2102AP-4** is a semiconductor device manufactured by **Mitsubishi Electric (MIT)**.

The M5L2102AP-4 is a semiconductor device manufactured by Mitsubishi Electric (MIT). Below are the factual specifications, descriptions, and features:

Manufacturer: Mitsubishi Electric (MIT)

Part Number: M5L2102AP-4

Specifications:

  • Type: High-speed CMOS logic IC
  • Function: Dual 4-input NAND gate
  • Technology: CMOS (Complementary Metal-Oxide-Semiconductor)
  • Supply Voltage (VCC): 3V to 18V (standard CMOS operating range)
  • Operating Temperature Range: -40°C to +85°C
  • Propagation Delay: Typically 60ns (at VCC = 5V)
  • Power Consumption: Low static power dissipation
  • Package Type: DIP (Dual In-line Package)
  • Pin Count: 14 pins

Descriptions:

The M5L2102AP-4 is a dual 4-input NAND gate IC designed for high-speed logic operations. It is built using CMOS technology, ensuring low power consumption while maintaining compatibility with TTL logic levels.

Features:

  • Dual 4-input NAND gates in a single package
  • Wide operating voltage range (3V–18V)
  • Low power consumption
  • High noise immunity
  • Compatible with TTL logic levels
  • Standard DIP package for easy integration

This information is based on available technical documentation for the M5L2102AP-4 from Mitsubishi Electric. For exact performance characteristics, refer to the official datasheet.

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