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M5M41000BL-7 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
M5M41000BL-7MIT150Yes

M5M41000BL-7** is a memory module manufactured by **MIT (Mitsubishi Electric)**.

The M5M41000BL-7 is a memory module manufactured by MIT (Mitsubishi Electric). Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Mitsubishi Electric (MIT)
  • Part Number: M5M41000BL-7
  • Memory Type: SRAM (Static Random-Access Memory)
  • Density: 1Mbit (128K x 8)
  • Supply Voltage: 5V ±10%
  • Access Time: 70ns
  • Package Type: 32-pin SOP (Small Outline Package)
  • Operating Temperature Range: 0°C to +70°C
  • Data Retention: Typically 10 years

Descriptions:

  • A high-speed CMOS SRAM with a 128K x 8 organization.
  • Designed for applications requiring fast access times and low power consumption.
  • Features a common I/O structure for simplified interfacing.

Features:

  • Fast Access Time: 70ns
  • Low Power Consumption:
  • Active Current: 60mA (max)
  • Standby Current: 10mA (max)
  • Single 5V Power Supply
  • Fully Static Operation: No clock or refresh required
  • Tri-State Outputs
  • TTL-Compatible Inputs and Outputs
  • High Reliability: Industrial-grade quality

This SRAM is commonly used in embedded systems, industrial controls, and other applications requiring fast, non-volatile memory storage.

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