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M62006 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
M62006MIT100Yes

Manufacturer:** MIT (Microchip Technology) **Part Number:** M62006 ### **Specifications:** - **Type:** High-voltage, high-speed power MOSFET driver - **Voltage Rating:** - Supply Voltage (VDD): Up to 20V - Output Voltage (VOUT): Up to

Manufacturer: MIT (Microchip Technology)

Part Number: M62006

Specifications:

  • Type: High-voltage, high-speed power MOSFET driver
  • Voltage Rating:
  • Supply Voltage (VDD): Up to 20V
  • Output Voltage (VOUT): Up to 600V
  • Output Current: Peak 2A (source/sink)
  • Propagation Delay: Typically 120ns
  • Rise/Fall Time: Typically 50ns (with 1nF load)
  • Operating Temperature Range: -40°C to +125°C
  • Package: 8-pin DIP or SOIC

Descriptions:

The M62006 is a high-performance MOSFET driver designed for high-voltage, high-speed switching applications. It provides robust gate driving capability for power MOSFETs and IGBTs, ensuring efficient switching in power electronics circuits.

Features:

  • High-voltage level shifting (up to 600V)
  • High peak output current (2A)
  • Fast propagation delay for high-frequency switching
  • Under-voltage lockout (UVLO) protection
  • Low power consumption
  • Compatible with TTL and CMOS logic inputs
  • Robust noise immunity

This driver is commonly used in motor control, switch-mode power supplies (SMPS), and other high-voltage power conversion systems.

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