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D4N01 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D4N01MOTO100Yes

D4N01** is a power MOSFET manufactured by **MOTO** (Motorola Semiconductor).

The D4N01 is a power MOSFET manufactured by MOTO (Motorola Semiconductor). Below are the factual specifications, descriptions, and features of the device:

Specifications:

  • Manufacturer: MOTO (Motorola Semiconductor)
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.5Ω (typical at VGS = 10V)
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 150pF (typical)
  • Package: TO-92 (Plastic Encapsulation)

Description:

The D4N01 is an N-channel enhancement-mode MOSFET designed for switching and amplification applications. It is commonly used in low-power circuits, motor control, and power management systems due to its low on-resistance and fast switching characteristics.

Features:

  • Low On-Resistance: Enhances efficiency in switching applications.
  • Fast Switching Speed: Suitable for high-frequency operations.
  • High Input Impedance: Easy to drive with logic-level signals.
  • Low Threshold Voltage: Ensures compatibility with TTL and CMOS logic.
  • TO-92 Package: Compact and suitable for through-hole PCB mounting.

This information is based on the manufacturer's datasheet and technical documentation.

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