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MC838P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MC838PMOTO105Yes

MC838P** is a **Motorola (MOTO)** manufactured **RF Power Transistor**.

The MC838P is a Motorola (MOTO) manufactured RF Power Transistor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Power Dissipation (Pd): 150W
  • Collector-Emitter Voltage (Vceo): 65V
  • Collector Current (Ic): 16A
  • Transition Frequency (ft): 30MHz
  • Gain (hFE): 10-40 (typical)
  • Package Type: TO-247 (3-pin)
  • Operating Temperature Range: -65°C to +200°C

Descriptions:

  • Designed for RF power amplification in VHF/UHF applications.
  • Suitable for linear and Class AB amplifier circuits.
  • High ruggedness and reliability for industrial and communication systems.

Features:

  • High power gain and efficiency.
  • Low intermodulation distortion.
  • Robust thermal performance with a TO-247 package.
  • Suitable for RF transmitters, broadcast equipment, and RF generators.

This transistor is optimized for high-frequency power amplification in professional and industrial RF applications.

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