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UPC1031H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC1031HNEC200Yes

Manufacturer:** NEC **Part Number:** UPC1031H ### **Specifications:** - **Type:** RF Power Transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Power Dissipation (Pc):** 30W - **Collector-Base Voltage (VCBO):** 60V -

Manufacturer: NEC

Part Number: UPC1031H

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Power Dissipation (Pc): 30W
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • DC Current Gain (hFE): 20-200
  • Transition Frequency (fT): 200MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220

Descriptions:

The UPC1031H is an NPN silicon RF power transistor designed for high-frequency amplification applications. It is commonly used in RF power amplifiers, transmitters, and other high-frequency circuits.

Features:

  • High power gain
  • Excellent linearity
  • Suitable for RF applications
  • Robust TO-220 package for heat dissipation
  • Wide operating temperature range

This transistor is optimized for stable performance in RF and microwave circuits.

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