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2SA1129 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1129NEC100Yes

2SA1129 is a PNP silicon transistor manufactured by NEC.

The 2SA1129 is a PNP silicon transistor manufactured by NEC. According to the NEC specifications, it has the following key characteristics:

  • Type: PNP silicon transistor
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • Junction Temperature (Tj): 150°C
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Package: TO-92

These specifications are based on the NEC datasheet for the 2SA1129 transistor.

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