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2SD1285-K Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1285-KNEC200Yes

2SD1285-K** is a silicon NPN epitaxial planar transistor manufactured by **NEC**.

The 2SD1285-K is a silicon NPN epitaxial planar transistor manufactured by NEC. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 60V
  • Maximum Collector-Emitter Voltage (VCE): 60V
  • Maximum Emitter-Base Voltage (VEB): 7V
  • Maximum Collector Current (IC): 3A
  • Maximum Power Dissipation (PC): 30W
  • DC Current Gain (hFE): 60 to 320 (at IC = 0.5A, VCE = 5V)
  • Transition Frequency (fT): 20MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications in consumer electronics, power supplies, and audio amplifiers.
  • Encased in a TO-220 package for efficient heat dissipation.

Features:

  • High current capability (up to 3A).
  • Low saturation voltage for improved efficiency.
  • High DC current gain (hFE) for better amplification performance.
  • Robust thermal characteristics due to TO-220 package.

This transistor is commonly used in power regulation, motor control, and audio amplification circuits.

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