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UPA1456H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPA1456HNEC1010Yes

Part Number:** UPA1456H **Manufacturer:** NEC **Specifications:** - **Type:** RF Transistor - **Material:** Silicon (Si) - **Package:** TO-220 - **Polarity:** NPN - **Maximum Power Dissipation (Pd):** 30W - **Collector-Base Voltage (VCB

Part Number: UPA1456H

Manufacturer: NEC

Specifications:

  • Type: RF Transistor
  • Material: Silicon (Si)
  • Package: TO-220
  • Polarity: NPN
  • Maximum Power Dissipation (Pd): 30W
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 8A
  • DC Current Gain (hFE): 60-200
  • Transition Frequency (fT): 30MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The UPA1456H is an NPN silicon RF transistor designed for high-frequency amplification applications. It is housed in a TO-220 package, providing efficient heat dissipation.

Features:

  • High power dissipation capability
  • Suitable for RF and switching applications
  • Robust construction for reliable performance
  • Wide operating temperature range

(Source: NEC Datasheet)

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