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UPC1222CR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC1222CRNEC1974Yes

NEC UPC1222CR** is a high-frequency, low-noise silicon NPN transistor designed for RF and microwave applications.

The NEC UPC1222CR is a high-frequency, low-noise silicon NPN transistor designed for RF and microwave applications.

Specifications:

  • Manufacturer: NEC (Nippon Electric Company)
  • Type: Silicon NPN Transistor
  • Application: RF/Microwave amplification, VHF/UHF circuits
  • Frequency Range: Up to 1 GHz
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 15V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 50mA
  • Power Dissipation (PD): 300mW
  • Transition Frequency (fT): 1 GHz (typical)
  • Noise Figure: Low noise (specific value depends on operating conditions)
  • Package: TO-72 (Metal Can)

Descriptions & Features:

  • Optimized for high-frequency amplification in RF circuits.
  • Low noise performance, making it suitable for sensitive receiver applications.
  • High gain and linearity for stable signal amplification.
  • Metal can package (TO-72) for improved thermal performance and shielding.
  • Commonly used in VHF/UHF amplifiers, oscillators, and RF front-end circuits.

This transistor is ideal for applications requiring low-noise, high-frequency performance in communication and broadcast equipment.

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