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C1037HA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
C1037HANEC128Yes

Part C1037HA Manufacturer: NEC** ### **Specifications:** - **Type:** High-frequency transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Base Voltage (VCB):** 30V - **Maximum Collector-Emitter Voltage

Part C1037HA Manufacturer: NEC

Specifications:

  • Type: High-frequency transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 300mW
  • Transition Frequency (fT): 800MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

The C1037HA is a high-frequency NPN transistor manufactured by NEC, designed for RF amplification and switching applications. It features low noise and high-speed performance, making it suitable for use in communication circuits, oscillators, and signal processing.

Features:

  • High transition frequency (800MHz)
  • Low noise characteristics
  • Suitable for small-signal amplification
  • Compact TO-92 package
  • Reliable performance in high-frequency circuits

This transistor is commonly used in radio frequency (RF) stages, VHF/UHF applications, and general-purpose amplification.

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