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D5556C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D5556CNEC136Yes

Part D5556C Manufacturer: NEC** ### **Specifications:** - **Manufacturer:** NEC (Nippon Electric Company) - **Type:** High-frequency transistor (Bipolar Junction Transistor - BJT) - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum

Part D5556C Manufacturer: NEC

Specifications:

  • Manufacturer: NEC (Nippon Electric Company)
  • Type: High-frequency transistor (Bipolar Junction Transistor - BJT)
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (Vcb): 60V
  • Maximum Collector-Emitter Voltage (Vce): 50V
  • Maximum Emitter-Base Voltage (Veb): 5V
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 25W
  • Transition Frequency (ft): 150MHz
  • Gain Bandwidth Product: High-frequency operation
  • Package Type: TO-220 (Plastic-molded)

Descriptions:

The D5556C is an NPN silicon power transistor designed for high-frequency amplification and switching applications. It is commonly used in RF amplifiers, power supply circuits, and general-purpose switching.

Features:

  • High current capability (3A)
  • High transition frequency (150MHz) for fast switching
  • Low saturation voltage
  • TO-220 package for efficient heat dissipation
  • Suitable for medium-power amplification and switching

This transistor is now considered obsolete, but equivalent replacements may be available from other manufacturers.

(Note: Always verify datasheet details for exact performance characteristics.)

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