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2N5550 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N5550NS565Yes

2N5550 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by KEC (Korea Electronics Company).

The 2N5550 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by KEC (Korea Electronics Company). Below are the key specifications for the 2N5550 transistor:

  • Type: NPN
  • Collector-Emitter Voltage (VCEO): 140V
  • Collector-Base Voltage (VCBO): 160V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 600mA
  • Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 60 to 240
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

These specifications are based on the datasheet provided by KEC for the 2N5550 transistor.

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