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2PB709ART Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2PB709ARTNXP1000Yes

2PB709ART is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors.

The 2PB709ART is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors. Key specifications include:

  • Type: PNP transistor
  • Package: SOT23 (Surface-Mount Device)
  • Collector-Base Voltage (VCBO): -40 V
  • Collector-Emitter Voltage (VCEO): -40 V
  • Emitter-Base Voltage (VEBO): -5 V
  • Collector Current (IC): -500 mA
  • Power Dissipation (Ptot): 330 mW
  • DC Current Gain (hFE): Typically 100 to 250 at IC = -10 mA and VCE = -1 V
  • Transition Frequency (fT): 250 MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

This transistor is designed for general-purpose amplification and switching applications.

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