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BC857C@215 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC857C@215NXP12000Yes

BC857C@215** is a general-purpose PNP transistor manufactured by **NXP Semiconductors**.

The BC857C@215 is a general-purpose PNP transistor manufactured by NXP Semiconductors. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -45V
  • Maximum Collector-Emitter Voltage (VCE): -45V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -100mA
  • Total Power Dissipation (Ptot): 250mW
  • DC Current Gain (hFE): 420 to 800 (at IC = -2mA, VCE = -5V)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Marking: BC857C)

Descriptions:

  • The BC857C@215 is a low-power PNP transistor designed for general-purpose amplification and switching applications.
  • It is part of the BC857 series, which includes variants with different current gain ranges (A, B, C).
  • Suitable for use in signal processing, audio amplification, and digital switching circuits.

Features:

  • High current gain (hFE) for improved signal amplification.
  • Low noise performance, making it suitable for audio applications.
  • Fast switching speed due to high transition frequency (fT).
  • Compact SOT-23 package for space-constrained designs.
  • RoHS compliant.

This information is based on NXP’s official datasheet for the BC857C@215 transistor.

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