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PDTA143XE+135 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PDTA143XE+135NXP300Yes

PDTA143XE+135** is a **PNP resistor-equipped transistor (RET)** manufactured by **NXP Semiconductors**.

The PDTA143XE+135 is a PNP resistor-equipped transistor (RET) manufactured by NXP Semiconductors.

Key Specifications:

  • Transistor Type: PNP
  • Configuration: Resistor-Equipped (RET)
  • Collector-Emitter Voltage (VCEO): -50V
  • Collector Current (IC): -100mA
  • Base-Emitter Resistor (R1): 10kΩ
  • Base-Collector Resistor (R2): 10kΩ
  • Power Dissipation (Ptot): 250mW
  • DC Current Gain (hFE): 50 (min) @ IC = -2mA, VCE = -5V
  • Package: SOT-143B (4-pin)
  • Operating Temperature Range: -55°C to +150°C

Features:

  • Integrated bias resistors for simplified circuit design
  • High voltage capability
  • Low leakage current
  • Compact SMD package for space-saving applications

Applications:

  • Switching circuits
  • Signal amplification
  • Digital logic interfaces
  • Load driving in low-power applications

This component is designed for surface-mount (SMD) applications and is commonly used in consumer electronics, industrial controls, and automotive systems.

For detailed electrical characteristics, refer to the NXP PDTA143XE+135 datasheet.

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