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BU406G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BU406GON100Yes

BU406G** is a high-voltage NPN transistor manufactured by **ON Semiconductor**.

The BU406G is a high-voltage NPN transistor manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 400V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 7A
  • Power Dissipation (PD): 60W
  • DC Current Gain (hFE): 15 (min) at IC = 1A
  • Transition Frequency (fT): 10MHz
  • Operating Temperature Range: -65°C to +150°C
  • Package: TO-220

Descriptions:

The BU406G is designed for high-voltage switching and amplification applications. It is commonly used in power supplies, inverters, and other high-voltage circuits.

Features:

  • High collector-emitter breakdown voltage
  • High current capability
  • Low saturation voltage
  • TO-220 package for easy mounting

This transistor is suitable for applications requiring robust performance in high-voltage environments.

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