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FDN5618P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDN5618PON 60000Yes

60V P-Channel Logic Level PowerTrench MOSFET

The FDN5618P is an N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 1.3A
  • Pulsed Drain Current (IDM): 5A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 0.5W
  • On-Resistance (RDS(on)): 0.28Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
  • Input Capacitance (Ciss): 50pF (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-pin)

Description:

The FDN5618P is a small-signal MOSFET designed for low-voltage, high-speed switching applications. It is optimized for efficiency in power management circuits, load switching, and DC-DC converters.

Features:

  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Small Form Factor: SOT-23 package saves board space.
  • Low Gate Charge: Enhances switching efficiency.
  • RoHS Compliant: Meets environmental standards.

This MOSFET is commonly used in portable electronics, power supplies, and battery management systems.

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