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FDV301N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
FDV301N	ON	14000	Yes

Digital FET , N-Channel

The FDV301N is an N-channel MOSFET manufactured by ON Semiconductor.

Specifications:

Drain-Source Voltage (V_DS): 25V
Gate-Source Voltage (V_GS): ±8V
Continuous Drain Current (I_D): 0.68A
Pulsed Drain Current (I_DM): 2.7A
Power Dissipation (P_D): 0.35W
On-Resistance (R_DS(on)): 1.2Ω (max) @ V_GS = 4.5V
Threshold Voltage (V_GS(th)): 0.7V (min) – 1.5V (max)
Package: SOT-23

Descriptions:

Low threshold voltage for compatibility with low-voltage logic.
Designed for high-efficiency switching applications.
RoHS compliant and lead-free.

Features:

Low On-Resistance: Optimized for power efficiency.
Fast Switching Speed: Suitable for high-frequency applications.
Small Form Factor: SOT-23 package for space-constrained designs.
ESD Protection: Enhanced reliability in sensitive circuits.

This MOSFET is commonly used in power management, load switching, and battery-powered applications.

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