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MMUN2211LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMUN2211LT1GON79299Yes

MMUN2211LT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMUN2211LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Type: NPN Bipolar Transistor
  • Package: SOT-23 (SC-59)
  • Collector-Base Voltage (V_CBO): 60V
  • Collector-Emitter Voltage (V_CEO): 50V
  • Emitter-Base Voltage (V_EBO): 5V
  • Continuous Collector Current (I_C): 600mA
  • Power Dissipation (P_D): 225mW
  • DC Current Gain (h_FE): 100 to 300 (at I_C = 150mA, V_CE = 1V)
  • Transition Frequency (f_T): 250MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power, high-speed switching circuits.
  • Compact SOT-23 package for space-constrained designs.

Features:

  • High Voltage Capability (up to 50V V_CEO)
  • Low Saturation Voltage
  • Fast Switching Speed
  • Pb-Free and RoHS Compliant

This transistor is commonly used in consumer electronics, signal amplification, and driver circuits.

Would you like additional details on electrical characteristics or application notes?

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