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MMUN2233LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMUN2233LT1GON5780Yes

MMUN2233LT1G** is a **NPN Bipolar Junction Transistor (BJT)** manufactured by **ON Semiconductor**.

The MMUN2233LT1G is a NPN Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 600mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100 - 300 (at IC = 150mA, VCE = 10V)
  • Transition Frequency (fT): 250MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The MMUN2233LT1G is a general-purpose NPN transistor designed for switching and amplification applications. It is suitable for low-power circuits, signal amplification, and driver stages in electronic devices.

Features:

  • High current gain (hFE) for improved signal amplification
  • Low saturation voltage for efficient switching
  • Compact SOT-23 package for space-constrained designs
  • RoHS compliant (Lead-free and environmentally friendly)

This transistor is commonly used in audio amplifiers, signal processing circuits, and switching applications.

Would you like additional details on its pin configuration or application notes?

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