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NTMFS4119NT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NTMFS4119NT1GON293Yes

NTMFS4119NT1G** is a **Power MOSFET** manufactured by **ON Semiconductor**.

The NTMFS4119NT1G is a Power MOSFET manufactured by ON Semiconductor.

Specifications:

  • Type: N-Channel
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • RDS(ON) (Max): 1.9mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +175°C
  • Package: DFN5 5x6

Descriptions:

The NTMFS4119NT1G is a low RDS(ON) MOSFET designed for high-efficiency power management applications. It features enhanced thermal performance due to its DFN5 package and is optimized for battery protection, load switching, and DC-DC conversion.

Features:

  • Low on-resistance (RDS(ON)) for reduced conduction losses
  • High current handling capability
  • Fast switching performance
  • AEC-Q101 qualified (for automotive applications)
  • Lead-free and RoHS compliant

This MOSFET is commonly used in power supplies, motor control, and automotive systems.

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