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K2971M30 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
K2971M30BAOKE145Yes

Part Number:** K2971M30 **Manufacturer:** BAOKE ### **Specifications:** - **Type:** MOSFET - **Channel Type:** N-Channel - **Drain-Source Voltage (VDS):** 30V - **Continuous Drain Current (ID):** 75A - **Power Dissipation (PD):** 150W -

Part Number: K2971M30

Manufacturer: BAOKE

Specifications:

  • Type: MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 75A
  • Power Dissipation (PD): 150W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS = 10V
  • Package: TO-263 (D2PAK)

Descriptions:

The K2971M30 is an N-Channel MOSFET designed for high-power switching applications. It offers low on-resistance and high current handling, making it suitable for power management in automotive, industrial, and consumer electronics.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability
  • Fast switching performance
  • Robust thermal performance
  • Lead-free and RoHS compliant

For detailed electrical characteristics, refer to the manufacturer's datasheet.

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