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2N5322 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N5322ASI186Yes

2N5322** is a PNP silicon transistor manufactured by **ASI (Advanced Semiconductor, Inc.

The 2N5322 is a PNP silicon transistor manufactured by ASI (Advanced Semiconductor, Inc.).

Specifications:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Emitter Voltage (VCEO): -60V
  • Collector-Base Voltage (VCBO): -80V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A (max)
  • Power Dissipation (PD): 30W (at 25°C)
  • DC Current Gain (hFE): 20–70 (at IC = 1A, VCE = -4V)
  • Transition Frequency (fT): 30MHz (typical)
  • Operating Temperature Range: -65°C to +200°C
  • Package: TO-66 (Metal Can)

Descriptions:

The 2N5322 is a high-power PNP transistor designed for general-purpose amplification and switching applications. It is suitable for medium-power circuits requiring high voltage and current handling capabilities.

Features:

  • High current and voltage ratings
  • Robust metal can (TO-66) package for efficient heat dissipation
  • Suitable for power amplification and switching applications
  • Wide operating temperature range

This transistor is commonly used in power supplies, audio amplifiers, and motor control circuits.

(Note: Always refer to the manufacturer's datasheet for precise specifications and application guidelines.)

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