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8050C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
8050C500Yes

Part 8050C Manufacturer Specifications:** - **Type:** NPN Bipolar Junction Transistor (BJT) - **Package:** TO-92 (common through-hole package) - **Maximum Collector-Emitter Voltage (VCE):** 25V - **Maximum Collector-Base Voltage (V

Part 8050C Manufacturer Specifications:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: TO-92 (common through-hole package)
  • Maximum Collector-Emitter Voltage (VCE): 25V
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 500mA
  • Maximum Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 120–400 (varies by manufacturer)
  • Transition Frequency (fT): ~100MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The 8050C is a general-purpose NPN transistor commonly used in amplification and switching applications. It is suitable for low-power circuits, signal amplification, and driving small loads.

Features:

  • High current gain (hFE)
  • Low noise performance
  • Fast switching speed
  • Compact TO-92 package for easy PCB mounting
  • Suitable for audio amplification and digital logic circuits

(Note: Exact specifications may vary slightly by manufacturer. Always refer to the datasheet for precise details.)

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