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K1050E Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
K1050E700Yes

Part Number:** K1050E **Manufacturer:** ON Semiconductor ### **Specifications:** - **Type:** N-Channel MOSFET - **Drain-Source Voltage (VDSS):** 50V - **Continuous Drain Current (ID):** 30A - **Pulsed Drain Current (I

Part Number: K1050E

Manufacturer: ON Semiconductor

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 50V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 75W
  • On-Resistance (RDS(on)): 0.028Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 1200pF (typical)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-252 (DPAK)

Description:

The K1050E is an N-Channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching speed
  • High current handling capability
  • Robust thermal performance
  • Lead-free and RoHS compliant
  • Suitable for surface-mount applications (DPAK package)

This MOSFET is commonly used in power supplies, battery management systems, and automotive electronics.

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