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SI2301DS-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2301DS-T1SILICONIX2764Yes

SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.

The SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.

Specifications:

  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -3.1A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = -4.5V
  • Threshold Voltage (VGS(th)): -1V (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

  • Package: SOT-23 (3-pin)
  • Technology: Advanced Trench MOSFET
  • Low On-Resistance: Enhances efficiency in power applications
  • Fast Switching Speed: Suitable for high-frequency switching circuits
  • Low Gate Charge: Reduces drive power requirements
  • RoHS Compliant: Meets environmental standards

This MOSFET is commonly used in power management, load switching, and DC-DC conversion applications.

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