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SI2302DS-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2302DS-T1SILICONIX2770Yes

SI2302DS-T1** is a P-Channel MOSFET manufactured by **Siliconix (a subsidiary of Vishay Intertechnology)**.

The SI2302DS-T1 is a P-Channel MOSFET manufactured by Siliconix (a subsidiary of Vishay Intertechnology). Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Siliconix (Vishay)
  • Channel Type: P-Channel
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -3.7A (at VGS = -4.5V)
  • Pulsed Drain Current (IDM): -15A
  • On-Resistance (RDS(on)): 50mΩ (max) at VGS = -4.5V
  • Power Dissipation (PD): 1.25W (Ta = 25°C)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions & Features:

  • Low On-Resistance: Ensures minimal power loss in switching applications.
  • Fast Switching Speed: Suitable for high-efficiency power management.
  • Logic-Level Gate Drive: Can be driven by low-voltage control signals (VGS = -4.5V).
  • Compact SOT-23 Package: Ideal for space-constrained applications.
  • RoHS Compliant: Meets environmental standards.

Applications:

  • Power management in portable devices
  • Load switching
  • Battery protection circuits
  • DC-DC converters

This MOSFET is commonly used in low-voltage power control applications due to its efficiency and compact form factor.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)*

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