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BC847BLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC847BLT1GONSEMI60000Yes

BC847BLT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The BC847BLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 45V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 6V
  • Continuous Collector Current (IC): 100mA
  • Total Power Dissipation (PD): 250mW
  • DC Current Gain (hFE): 200–450 (at IC = 2mA, VCE = 5V)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power, high-speed switching circuits.
  • RoHS compliant and lead-free.

Features:

  • High current gain (hFE).
  • Low noise performance.
  • Small SOT-23 package for space-constrained applications.
  • Suitable for automated assembly processes.

This transistor is commonly used in signal amplification, switching circuits, and driver stages in consumer electronics, industrial controls, and communication devices.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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