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L9014QLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L9014QLT1GLRC5750Yes

L9014QLT1G** is a PNP bipolar junction transistor (BJT) manufactured by **LRC (Leshan Radio Company)**.

The L9014QLT1G is a PNP bipolar junction transistor (BJT) manufactured by LRC (Leshan Radio Company).

Key Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -45V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -100mA
  • Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 60-400 (depending on operating conditions)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Surface Mount)

Features:

  • Low saturation voltage
  • High current gain
  • Suitable for switching and amplification applications
  • Compact SOT-23 package for space-constrained designs

Applications:

  • Signal amplification
  • Switching circuits
  • Audio pre-amplifiers
  • General-purpose PNP transistor applications

For exact performance characteristics, refer to the official datasheet from LRC.

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