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MMBT5551LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT5551LT1GONSEMI70000Yes

MMBT5551LT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMBT5551LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 160V
  • Collector-Base Voltage (VCBO): 160V
  • Emitter-Base Voltage (VEBO): 6V
  • Continuous Collector Current (IC): 600mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 80 to 250 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions:

The MMBT5551LT1G is a high-voltage, low-power NPN transistor designed for general-purpose amplification and switching applications. It is suitable for use in a wide range of electronic circuits, including signal amplification, driver stages, and switching functions.

Features:

  • High voltage capability (160V VCEO)
  • Low saturation voltage
  • High current gain
  • Small SOT-23 package for space-saving designs
  • Pb-free and RoHS compliant

This transistor is commonly used in consumer electronics, industrial controls, and power management applications.

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