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NDS331N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NDS331NONSEMI8602Yes

N-Channel Logic Level Enhancement Mode Field Effect Transistor

The NDS331N is a P-channel MOSFET manufactured by ONSEMI. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -4.3A
  • Pulsed Drain Current (IDM): -16A
  • Power Dissipation (PD): 1.4W (at 25°C)
  • On-Resistance (RDS(on)): 85mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Input Capacitance (Ciss): 300pF (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23

Descriptions:

The NDS331N is a P-channel enhancement-mode MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used in power management, load switching, and DC-DC conversion circuits.

Features:

  • Low On-Resistance: Ensures minimal power loss.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Small Form Factor: SOT-23 package for space-constrained designs.
  • Low Gate Charge: Enhances switching efficiency.
  • RoHS Compliant: Environmentally friendly.

This information is based on ONSEMI's official datasheet for the NDS331N.

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