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NRVB120VLSFT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
NRVB120VLSFT1GONSEMI60000Yes

NRVB120VLSFT1G** is a Schottky Barrier Diode (SBD) manufactured by **ON Semiconductor**.

The NRVB120VLSFT1G is a Schottky Barrier Diode (SBD) manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: ON Semiconductor
  • Part Number: NRVB120VLSFT1G
  • Diode Type: Schottky Barrier Diode
  • Voltage Rating (VRRM): 120V
  • Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Forward Voltage Drop (VF): 0.95V (typical at 1A)
  • Reverse Leakage Current (IR): 100µA (max at 120V)
  • Operating Junction Temperature (TJ): -65°C to +125°C
  • Package: SOD-123FL

Descriptions:

  • Designed for high-efficiency rectification in low-voltage, high-frequency applications.
  • Features a low forward voltage drop for reduced power loss.
  • Suitable for switching power supplies, DC-DC converters, and reverse polarity protection circuits.

Features:

  • Low Forward Voltage: Enhances efficiency in power-sensitive applications.
  • High Surge Current Capability: Ensures reliability under transient conditions.
  • Fast Switching Speed: Ideal for high-frequency circuits.
  • Lead-Free & RoHS Compliant: Meets environmental standards.
  • Compact SOD-123FL Package: Space-saving surface-mount design.

For detailed technical information, refer to the official ON Semiconductor datasheet.

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