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2SC3332S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3332S133Yes

2SC3332S** is a high-frequency, high-speed switching NPN bipolar junction transistor (BJT) designed for RF and microwave applications.

The 2SC3332S is a high-frequency, high-speed switching NPN bipolar junction transistor (BJT) designed for RF and microwave applications. Below are its key specifications, descriptions, and features:

Manufacturer:

  • Toshiba Semiconductor

Key Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (Vcb): 15V
  • Maximum Collector-Emitter Voltage (Vce): 12V
  • Maximum Emitter-Base Voltage (Veb): 3V
  • Collector Current (Ic): 50mA (max)
  • Power Dissipation (Pd): 150mW (max)
  • Transition Frequency (fT): 7000MHz (7GHz)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • Gain (hFE): 20–60 (at Vce=5V, Ic=10mA)
  • Package Type: SOT-323 (SC-70)

Descriptions:

  • Designed for high-frequency amplification and low-noise applications in RF circuits.
  • Suitable for VHF/UHF/microwave applications, including mobile communication, satellite receivers, and wireless modules.
  • Compact SOT-323 package for space-constrained PCB designs.

Features:

  • High transition frequency (7GHz) for excellent high-speed performance.
  • Low noise figure for improved signal clarity in RF applications.
  • Small form factor (SOT-323) suitable for compact circuit designs.
  • Optimized for RF amplification in communication systems.

This transistor is commonly used in low-power RF amplifiers, oscillators, and mixer stages in wireless communication devices.

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