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BAT54CLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BAT54CLT1GONSEMI30000Yes

BAT54CLT1G** is a Schottky diode manufactured by **ON Semiconductor**.

The BAT54CLT1G is a Schottky diode manufactured by ON Semiconductor.

Specifications:

  • Type: Schottky Barrier Diode
  • Configuration: Common Cathode Dual Diode
  • Maximum Reverse Voltage (VR): 30 V
  • Forward Continuous Current (IF): 200 mA
  • Peak Forward Surge Current (IFSM): 500 mA
  • Forward Voltage Drop (VF): 0.5 V (typical at 10 mA)
  • Reverse Leakage Current (IR): 0.1 µA (typical at 25°C)
  • Operating Temperature Range: -65°C to +125°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The BAT54CLT1G is a dual Schottky diode with a common cathode configuration, designed for high-speed switching applications. It features low forward voltage drop and fast switching characteristics, making it suitable for power management, signal clamping, and protection circuits.

Features:

  • Low forward voltage drop
  • High switching speed
  • Low power loss
  • Common cathode configuration
  • Small SOT-23 package for space-saving designs

This diode is commonly used in portable electronics, power supplies, and signal processing circuits.

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