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L2SC3356LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L2SC3356LT1GLRC9860Yes

L2SC3356LT1G** is a high-performance NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor (LRC)**.

The L2SC3356LT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor (LRC).

Key Specifications:

  • Type: NPN Transistor
  • Package: SOT-23 (SC-59)
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100 to 400 (at IC = 2mA, VCE = 5V)
  • Transition Frequency (fT): 6GHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Features:

  • High-speed switching capability
  • Low noise performance
  • Suitable for RF and general-purpose amplification
  • Small form factor (SOT-23) for space-constrained applications

Applications:

  • RF amplifiers
  • Oscillators
  • High-frequency signal processing
  • General-purpose switching

This transistor is designed for high-frequency and low-noise applications, making it ideal for communication and signal processing circuits.

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