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LMBT5551LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMBT5551LT1GLRC22990Yes

LMBT5551LT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The LMBT5551LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 160V
  • Collector-Emitter Voltage (VCEO): 160V
  • Emitter-Base Voltage (VEBO): 6V
  • Continuous Collector Current (IC): 600mA
  • Power Dissipation (PD): 350mW
  • DC Current Gain (hFE): 80 to 250 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High voltage capability with low saturation voltage.
  • Suitable for low-power applications in consumer electronics, industrial controls, and signal processing.
  • RoHS compliant and lead-free.

For detailed electrical characteristics and application notes, refer to the official ON Semiconductor datasheet.

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