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2N6210 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
2N6210120Yes

2N6210** is a PNP bipolar junction transistor (BJT) manufactured by various semiconductor companies.

The 2N6210 is a PNP bipolar junction transistor (BJT) manufactured by various semiconductor companies. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Emitter Voltage (VCEO): -60V
  • Maximum Collector-Base Voltage (VCBO): -80V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -3A
  • Power Dissipation (PD): 40W (at 25°C case temperature)
  • DC Current Gain (hFE): 20 to 60 (at IC = -1A, VCE = -4V)
  • Transition Frequency (fT): 50MHz (typical)
  • Operating Temperature Range: -65°C to +200°C

Description:

The 2N6210 is a high-power PNP transistor designed for general-purpose amplification and switching applications. It is commonly used in power control circuits, motor drivers, and audio amplifiers due to its high current and voltage handling capabilities.

Features:

  • High current and power handling capacity
  • Low saturation voltage
  • Fast switching speed
  • Robust construction for reliability
  • TO-66 metal case package for efficient heat dissipation

The 2N6210 is often paired with complementary NPN transistors like the 2N6211 in push-pull configurations.

*(Note: Specifications may vary slightly depending on the manufacturer.)*

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