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2SD1507M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1507M2000Yes

2SD1507M** is a silicon NPN power transistor designed for general-purpose amplification and switching applications.

The 2SD1507M is a silicon NPN power transistor designed for general-purpose amplification and switching applications. Below are its key specifications, descriptions, and features:

Manufacturer:

  • Renesas Electronics (formerly Hitachi Semiconductor)

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 2A
  • Power Dissipation (PC): 10W
  • DC Current Gain (hFE): 60-320 (at IC = 0.5A, VCE = 5V)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220F (fully molded)

Descriptions:

  • Designed for high-speed switching and amplification in power circuits.
  • Suitable for audio amplifiers, motor drivers, and power regulation applications.
  • Features low saturation voltage for efficient switching performance.

Features:

  • High current capability (up to 2A).
  • Low collector-emitter saturation voltage (VCE(sat)): 0.3V (max) at IC = 1A.
  • Fully molded TO-220F package for improved thermal performance.
  • Complementary PNP transistor: 2SB817M (for push-pull configurations).

This transistor is commonly used in power supplies, inverters, and electronic control circuits. For detailed application notes, refer to the manufacturer's datasheet.

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