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SG3503M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SG3503MLINFIN294Yes

SG3503M** is a power MOSFET manufactured by **LINFIN**.

The SG3503M is a power MOSFET manufactured by LINFIN. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 50A
  • Pulsed Drain Current (IDM): 150A
  • Power Dissipation (PD): 50W
  • On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Input Capacitance (Ciss): 2500pF (typ)
  • Output Capacitance (Coss): 500pF (typ)
  • Reverse Transfer Capacitance (Crss): 100pF (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The SG3503M is a high-performance N-Channel MOSFET designed for power management applications. It offers low on-resistance, high current handling, and efficient switching performance, making it suitable for DC-DC converters, motor control, and power supply circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching speed
  • High current capability
  • Avalanche energy specified
  • Lead-free and RoHS compliant
  • TO-252 (DPAK) package for efficient thermal performance

This MOSFET is optimized for applications requiring high efficiency and reliability in power conversion systems.

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