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2SB764-E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB764-E125Yes

2SB764-E** is a PNP bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SB764-E is a PNP bipolar junction transistor (BJT) manufactured by Toshiba. Below are its specifications, descriptions, and features:

Manufacturer:

  • Toshiba Semiconductor

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-220F (Fully Molded Plastic Package)

Features:

  • High current capability (up to 3A)
  • Low saturation voltage
  • Suitable for power amplification and switching applications
  • Fully molded package for improved thermal performance

Applications:

  • Power amplification
  • Switching circuits
  • Motor control
  • Voltage regulation

This transistor is commonly used in power management and amplification circuits where a high-current PNP transistor is required.

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