Professional IC Distribution & Technical Solutions

The MDF4N60B is a power MOSFET manufactured by MagnaChip Semiconductor (MagnaCh). Below are its key specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (V_DSS): 600V
• Continuous Drain Current (I_D): 4A
• Pulsed Drain Current (I_DM): 16A
• Power Dissipation (P_D): 38W
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 2.5Ω (max) @ V_GS = 10V
• Input Capacitance (C_iss): 350pF (typical)
• Output Capacitance (C_oss): 45pF (typical)
• Reverse Transfer Capacitance (C_rss): 10pF (typical)
• Turn-On Delay Time (t_d(on)): 12ns (typical)
• Turn-Off Delay Time (t_d(off)): 40ns (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-252 (DPAK)

Descriptions:

• The MDF4N60B is an N-channel MOSFET designed for high-voltage, high-speed switching applications.
• It is optimized for efficiency in power supplies, motor control, and other power management circuits.
• The device features low gate charge and fast switching performance.

Features:

• High Voltage Capability: 600V breakdown voltage for robust performance.
• Low On-Resistance: Minimizes conduction losses.
• Fast Switching Speed: Enhances efficiency in high-frequency applications.
• Avalanche Energy Rated: Improves reliability in inductive load conditions.
• Lead-Free & RoHS Compliant: Meets environmental standards.

This MOSFET is commonly used in SMPS (Switched-Mode Power Supplies), inverters, LED drivers, and industrial power systems.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)*