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BC807 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC807CJ9000Yes

PNP Silicon Transistor (High current application Switching application)

The BC807 is a PNP bipolar junction transistor (BJT) manufactured by CJ (or other semiconductor companies). Below are the factual specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Emitter Voltage (VCE): -45V
  • Maximum Collector-Base Voltage (VCB): -50V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -500mA
  • Total Power Dissipation (Ptot): 300mW
  • DC Current Gain (hFE): 160 to 600 (depending on variant)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The BC807 is a general-purpose PNP transistor commonly used in amplification and switching applications.
  • It is housed in a TO-92 package, making it suitable for through-hole PCB mounting.
  • Designed for low-power applications with moderate speed and current handling capabilities.

Features:

  • High current gain (hFE) for improved signal amplification.
  • Low saturation voltage for efficient switching.
  • Complementary NPN pair available (e.g., BC817 for NPN).
  • Suitable for audio amplification, signal processing, and driver stages.

This information is based on standard datasheet specifications and may vary slightly depending on the manufacturer.

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