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MMBF170LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBF170LT1GONSEMI28790Yes

MMBF170LT1G** is a **N-channel JFET** (Junction Field-Effect Transistor) manufactured by **ON Semiconductor**.

The MMBF170LT1G is a N-channel JFET (Junction Field-Effect Transistor) manufactured by ON Semiconductor.

Specifications:

  • Type: N-Channel JFET
  • Maximum Drain-Source Voltage (VDS): 25V
  • Maximum Gate-Source Voltage (VGS): 25V
  • Maximum Continuous Drain Current (ID): 50mA
  • Maximum Power Dissipation (PD): 225mW
  • Gate-Source Cutoff Voltage (VGS(off)): -0.3V to -3V
  • Zero-Gate-Voltage Drain Current (IDSS): 0.5mA to 20mA
  • Input Capacitance (Ciss): 5pF (typical)
  • Output Capacitance (Coss): 3pF (typical)
  • Package: SOT-23 (3-Lead)

Descriptions:

  • Designed for low-noise, high-input-impedance applications.
  • Suitable for switching and amplification in low-power circuits.
  • Features low leakage current and high gain.

Features:

  • Low noise performance.
  • High input impedance for signal processing.
  • Small SOT-23 package for space-constrained designs.
  • RoHS compliant and lead-free.

This transistor is commonly used in audio amplifiers, sensor interfaces, and switching applications.

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