Antiuav Chips and Transistors

MMBTA42LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
MMBTA42LT1G	ONSEMI	48000	Yes

High Voltage Transistors

The MMBTA42LT1G is a high-voltage NPN transistor manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (V_CEO): 300V
Collector-Base Voltage (V_CBO): 300V
Emitter-Base Voltage (V_EBO): 6V
Continuous Collector Current (I_C): 500mA
Power Dissipation (P_D): 225mW
DC Current Gain (h_FE): 40 (min) @ 10mA
Transition Frequency (f_T): 50MHz
Operating Temperature Range: -55°C to +150°C
Package: SOT-23 (3-Lead)

Descriptions:

Designed for high-voltage switching and amplification applications.
Suitable for low-power circuits requiring high breakdown voltage.
RoHS compliant and lead-free.

Features:

High Voltage Capability (300V V_CEO)
Low Saturation Voltage
Fast Switching Speed
Small SOT-23 Package for Space-Constrained Designs
Pb-Free and Halogen-Free

This transistor is commonly used in power management, switching regulators, and high-voltage amplification circuits.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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