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MMBTA92LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBTA92LT1GONSEMI9000Yes

MMBTA92LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMBTA92LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -300V
  • Collector-Emitter Voltage (VCEO): -300V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -500mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 25 (min) to 40 (max) @ IC = -10mA, VCE = -5V
  • Transition Frequency (fT): 50MHz (typical)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • SOT-23 (TO-236AB) (3-pin surface-mount package)

Descriptions & Features:

  • Designed for high-voltage applications.
  • Suitable for switching and amplification in low-power circuits.
  • Low saturation voltage for efficient switching.
  • RoHS compliant and lead-free.

This transistor is commonly used in power management, signal amplification, and switching applications.

Would you like additional details on electrical characteristics or application notes?

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